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A capacitive relative humidity sensor compatible with CMOS technology is researched. It uses comb electrodes and polyimide as moisture sensing material. A theoretical model for the variation of relative humidity sensor capacitance due to the dielectric constant change of the sensitive layer is built. The sensor is simulated by Ansys software using the same parameters. The conclusions show that the...
The paper presents a logic interconnect device (LED) to model digital circuit with near back-end-of-line (BEOL) effect, and to measure system performance. It is driven by a product inverter-based logic circuit, and it is loaded with near-BEOL wiring. The LID ring oscillator is measured and analyzed in 65 nm SOI CMOS. The methodology offers in-situ characterization of near-BEOL interconnect parasitics,...
The fabrication and characterization of low loss parallel plate and microstrip lines with an air dielectric layer is described. The lines are characterized by capacitance and loss tangent at 10 kHz and 100 kHz and by S-parameters up to 10 GHz. The inclusion of the air-gap significantly reduced the loss tangent and lowered the dielectric constant to between 1.5 and 1.8. More complicated transmission...
This paper describes a novel digital-to-analog (D/A) conversion technique, which uses the analog quantity polarization as a D/A conversion medium. It can be implemented by CMOS capacitors or by ferroelectric capacitors, which exhibit strong nonlinearity in charge versus voltage behavior. Because a ferroelectric material inherently has spontaneous polarization and generally has a large dielectric constant,...
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