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In this letter, we demonstrate state-of-the-art performance from N-polar GaN/AlGaN metal–insulator–semiconductor high-electron-mobility transistors. Self-aligned gate-first process was used for the fabrication of transistors. Graded InGaN and InN contact layers were used to achieve low ohmic contact resistance. The GaN channel thickness was scaled to 7 nm from previous generation of N-polar GaN devices...
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