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The performance of AlGaN/GaN high electron mobility transistors (HEMTs) with an AlxSi??Nz passivation is reported for the first time. Thin films (30 nm) of AlxSi??Nz and Si??Nz were used to passivate devices (fabricated side-by-side) and their performance was compared in both small signal and large signal measurement environments. Examination of MIS structures with each dielectric by capacitance-voltage...
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