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The application of sensor networks varies from medical field to the military application. The raw data onto the sensor node is of large quantity and it is necessary to store these data bits. In this paper, design of optimized Static Random Access Memory (SRAM) array for the sensor application is implemented. SRAM cell is designed using 8T. The Half Select Condition Free Cross Point 8T SRAM is modified,...
As the technology is shrinking, a significant amount of attention is being paid on the design of high stability Static Random Access (SRAM) cells in terms of static Noise Margin (SNM) for different levels of cache memories. This paper presents a qualitative design of 6T, 5T and 4T Static Random Memory Access cell in terms of Read cell current, Write time, Static Noise Margin (Read and Hold), Write...
FinFET is considered as the most likely candidate to substitute bulk CMOS technology. FinFET-based design, however, requires special attention due to its exclusive properties such as width quantization and electrical confinement (quantum-mechanical effect) even in subthreshold regime. Considering these exclusive properties of FinFETs, the sources of process variations and their effects on FinFET-based...
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