The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The writers are developing the production process device of thin-film material for the flexible solar cells using the high-frequency plasma chemical vapor deposition (CVD) method. In order to clarify the characteristics of the device, plasma treatment is applied on the Si wafer surface and basic characteristic of plasma is found by the analysis of the B doped p-type (100) Si wafer surface using X-ray...
To reduce the manufacturing cost, soda-lime glass (SLG) is often used as the substrate for thin-film solar cells. It is known that SLG contains about 16 wt% Na in the form of Na2O. During the growth of thin films, Na ions may diffuse out from SLG and diffuse into the grown thin films and affect the optoelectronic properties of the thin films. The widely used commercial F-doped Sn2O (FTO) glass (Teck...
In this paper the potential of amorphous silicon carbide used as an emitter for silicon heterojunction solar cells is presented. Especially the annealing behaviour of the open-circuit voltage Voc of n-doped amorphous silicon carbide heterojunction emitter solar cells is investigated in detail. We present our results of a significant open-circuit voltage improvement of more than 100 mV on both a flat...
The interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell requires a low temperature front surface passivation/anti-reflection structure. Conventional silicon surface passivation using SiO2 or a-SiNx is performed at temperature higher than 400??C, which is not suitable for the IBC-SHJ cell. In this paper, we propose a PECVD a-Si:H/a-SiNx:H/a-SiC:H stack structure to passivate the...
The n-type hydrogenated microcrystalline silicon-incorporated silicon oxide (n-μc-SiO:H) films are prepared by 13.56 MHz plasma enhanced chemical vapor deposition (rf-PECVD) using SiH4, H2 and CO2 gases for an inter-layer between the amorphous silicon (a-Si:H) top-cell and the microcrystalline silicon (μc-Si:H) bottom-cell in the thin-film silicon tandem solar cells. The optical and electrical properties...
Solution-processed spherical surface textures are demonstrated as a cost-effective antireflection coating on commercial amorphous Si solar cells. The spherical textures are formed with a monolayer of silica microspheres by convective coating, followed by a spin-on-glass film. It is found that the spherical texture reduces the reflectance of the cells in a broad wavelength range of 400 - 1,200 nm....
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.