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In this paper, new SRAM cell design methods for FinFET technology are proposed. One of the most important features of FinFET is that the independent front and back gate can be biased differently to control the current and the device threshold voltage. By controlling the back gate of FinFET, SRAM cell can be designed for minimum power consumption. This paper proposes a new 8T (8 transistors) SRAM structure...
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