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In our work, we investigate the effective work function (EWF) modulation of the metal gate about the Al/TiN/SiO2/p-Si structure through the thermal annealing. Through different annealing temperature and different annealing time, we find the EWF of gate electrode shifts from 4.73 eV (suitable for PMOS) to 4.18 eV (suitable for NMOS). We think the diffusion of Al to the interface and the variation of...
To widen the variety of substrate choice of Cu(In, Ga)Se2 (CIGS) solar cells, a lift off process was developed without an intentional sacrifice layer between CIGS and Mo back contact layers. CIGS films grown on Mo/glass substrates were transferred to alternative substrates of glass and polyimide. Based on the transferred CIGS films, deices with ITO/ZnO/CdS/CIGS/Mo/epoxy/alternative-substrates structure...
Undoped p-type NiO thin film has been developed on high resistivity Si substrates by reactive pulsed laser deposition technique (RPLD). Subsequently an Al/NiO Schottky diode has been fabricated by electron gun evaporation and was functionalized as H2 gas sensor.
Thin films of undoped and Al- and Ag-doped ZnO thin films have been obtained by spray pyrolysis deposition. The optimised parameters of deposition for the thin films to be used in optoelectronic applications are presented in the paper. The addition of low amounts of Al and Ag ions influences the film crystallinity and morphology. Based on the experimental results it is concluded that aluminium and...
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