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Ultra-thin yttrium oxide (Y2O3) films (physical thickness of 7 nm) were deposited on p-Si substrates by RF sputtering for MOS applications. The structural properties of the Y2O3 gate dielectrics were studied after RTA from 650 to 850??C. The crystalline phase and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively...
In our work, we investigate the effective work function (EWF) modulation of the metal gate about the Al/TiN/SiO2/p-Si structure through the thermal annealing. Through different annealing temperature and different annealing time, we find the EWF of gate electrode shifts from 4.73 eV (suitable for PMOS) to 4.18 eV (suitable for NMOS). We think the diffusion of Al to the interface and the variation of...
We report the first demonstration of a single silicide contact technology employing a low workfunction metal alloy [nickel (Ni) - dysprosium (Dy)] silicide, while achieving low contact resistance RC, for both n- and p- FETs. A key enabler is the aluminum ion implant technology for independent and effective reduction of RC for the strained p-FinFETs with SiGe S/D. For strained p-FinFETs, the Ni(Dy)SiGe...
In this work, the effects of aluminum implantation on thin La2O3 films grown by e-beam evaporation have been investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The small amount of aluminum incorporated (~ 6% near the surface) in the oxide film greatly modifies both material and electrical properties of the dielectric. Reduction...
In this work, the transparent thin film transistors (TTFTs) with slightly Al-doped ZnO films as the channel layers were fabricated by a magnetron radio frequency co-sputtering system. The performances of the TTFTs with various thicknesses of the channel layers were characterized. When the thickness of the channel layer was 25 nm, the field-effect carrier mobility and the on/off current ratio of the...
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