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Phase Change Memory (PCM) is a promising alternative technology for DRAM because of its advantages in terms of transistor density and energy consumption. It has been exploited to work in concert or alone inside various memory systems to meet the growing bandwidth needs of massive parallelism. PCM memory cells, however, have a common problem of limited write endurance. Various wear-leaving techniques...
Phase-Change-Memory (PCM) has emerged as a promising alternative of DRAM main memory. A new hybrid memory architecture, where DRAM serves as cache of PCM main memory, has been proposed to leverage PCM's high scalability and DRAM's fast access time. One biggest issue of PCM is the limited number of writes to storage cells. We argue that good cache mechanism will decrease PCM writes dramatically in...
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