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The doping process in the manufacturing of solar cell is to form a p-n junction by the injection of impurity materials into a silicon wafer. The elements of III or V group are used in the doping process during which the dopant materials are diffused thermally into the doping layer. In the conventional process of doping, the furnace or the laser is used with the control of temperature in the doping...
Large-scale InP-based photonic integrated circuits were first introduced in 2004, representing over an order-of-magnitude increase in integration complexity for commercial InP devices. In this talk we will review recent developments and manufacturing of these novel components.
Software-based self-test (SBST) is increasingly used for testing processor cores embedded in SoCs, mainly because it allows at-speed, low-cost testing, while requiring limited (if any) hardware modifications to the original design. However, the method requires effective techniques for generating suitable test programs and for monitoring the results. In the case of processor core testing, a particularly...
This paper studies the impact of intra-die random variability on low-power digital circuit designs, specifically, circuit timing failures due to intra-die variability. We identify a new low-Vdd statistical failure mode that is strongly supply-voltage dependent and also introduce a simple yet novel method for quantifying the effects of process variability on digital timing - a delay overlapping stage...
For several decades, the output from semiconductor manufacturers has been high volume products with process optimisation being continued throughout the lifetime of the product to ensure a satisfactory yield. However, product lifetimes are continually shrinking to keep pace with market demands. Furthermore there is an increase in dasiafoundrypsila business where product volumes are low; consequently...
The challenges of deriving early-adopter competitive advantage, even with fabless access to process technology, through leveraging features offered by the advanced, and possibly disruptive, process technologies in real SoC products, are outlined. A structured methodology for addressing these challenges, and bridging the gap between process and design, sufficiently early in the development cycle to...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
In-line process characterization is an important part of any semiconductor manufacturing operation. In today's manufacturing environment, process and equipment engineers are often challenged to find cost-effective alternatives to expensive contamination monitoring equipment. In the epitaxial silicon manufacturing process, the periodic monitoring of the oxide etch rate has shown to reveal the presence...
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