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This chapter provides a brief review of the assessment and benchmarking of logic devices presented in the 2011 edition of the International Technology Roadmap for Semiconductors (ITRS) chapter on Emerging Research Devices (ERD). The objectives of the ITRS ERD roadmap are to review recent research in beyond‐CMOS devices and to forecast the development of novel logic switches that might replace the...
In this paper, we develop an analytical model for the prediction of the peak voltage and the current in the current–voltage characteristics of nanowire resonant tunneling heterostructures. The model is applied in the case study of double‐barrier InAs/InP devices, and the results are obtained from numerical carrier transport calculations, in terms of structural parameters such as the nanowire radius...
This paper reports on the memory and memristive effects of Schottky barrier field effect transistors (SBFET) with gate-all-around (GAA) configuration and Si nanowire (SiNW) channel. Similar behavior has also been investigated for SBFETs with poly-Si nanowire (poly-SiNW) channel in back-gate configuration. The memristive devices presented here have the potential of a very high integration density,...
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