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A generic surface potential based current voltage (I-V) model for heavily doped asymmetric Double Gate MOSFET is presented. The model is derived from the 1-D Poisson equation with all the charge terms included and the channel potential is solved for the asymmetric operation of DG MOSFET based on the Newton Raphson Iterative method. A non charge sheet based drain current model based on the Pao-Sah's...
An analytical model is presented for the 3D subthreshold electrostatics of low-doped gate-all-around MOSFETs with circular and square cross sections. The model is based on a solution of the 3D Laplace equation utilizing the high symmetry of the devices and assuming near-parabolic potential distributions in the directions perpendicular to the gates for the central regions. To account for short-channel...
As the conventional MOSFET's scaling is approaching the limit imposed by short channel effects, Double Gate (DG) MOS transistors are appearing as the most feasible candidate in terms of technology in sub-45 nm technology nodes. As the short channel effect in DG transistor is controlled by the device geometry, undoped or lightly doped body is used to sustain the channel. There exits a disparity in...
We have analyzed the different structures of the DG MOSFETs and their potentials in suppressing short channel effects (SCEs). In particular, we have developed compact physics-based model of the subthreshold swing. Asymmetric DG MOSFET shows superior performance in the nanometer region. The new scale length for DG MOSFETs has been derived from the subthreshold swing model (S model). The new scale length...
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