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Ultrathin (11 nm) strained SiGe-on-insulator (SGOI) with a Ge fraction of 0.5 was fabricated by Ge condensation technique. The residual compressive strain as high as 1.72% was achieved in SGOI layer by reducing the initial thickness of as-grown Si0.93Ge0.07 layer. Strained-SGOI pMOSFET exhibits a hole mobility of 3 times higher than that of Si-on-insulator pMOSFET.
Compressively-strained germanium-on-insulator (c-GeOI) substrates have been fabricated using the Smart Cuttrade technology. The technique is based on the optimized epitaxial growth process that reduces the threading dislocation density (TDD) in the strained Ge layer to the levels of 8middot105 /cm2. Pseudo-MOSFET characterization showed 67% hole mobility enhancement with respect to conventional GeOI...
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