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We studied the impact of Yttrium and Lanthanum incorporation into HfO2 on reliability (TDDB, PBTI and 1/f noise). They introduce smaller Weibull ?? values and early failure in TDDB, with negative shift in PBTI. They are caused by the negatively charged interstitial oxygen defect generated by Yttrium and Lanthanum incorporation. The effect of Lanthanum is larger than that of Yttrium. It can be explained...
A systematic study of mobility performances and Bias Temperature Instability (BTI) reliability was done on a large variety of advanced dielectric stacks. We clearly demonstrate that mobility performances and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si interface. Reducing the metal gate thickness favors the reduction of mobility...
We report for the first time that extreme EOT scaling and low n/p VTHs can be achieved simultaneously. Underlying mechanisms that enable EOT scaling and EWF tuning are explained and the fundamental device parameters including reliability of the extremely scaled devices are discussed. Record low gate leakage, appropriately low VTHs and competitive carrier mobilities in this work demonstrate the gate...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
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