The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel GaAs MOSFETs and short-channel InGaAs MOSFETs are demonstrated. High current of 960 muA/mum and transconductance of 793 muS/mum have been achieved. Scaling behavior has been investigated experimentally down to 80 nm for the first time in III-V...
The surface Fermi level unpinning in InGaAs has been realized with high kappa dielectric growth using molecular beam eitaxy (MBE) and atomic layer deposition (ALD). Furthermore, world-record device performances in self-aligned inversion-channel InGaAs MOSFET and a capacitance equivalent thickness (CET) of les 1 nm in Ga2O3(Gd2O3) and ALD-HfO2 on InGaAs have been achieved.
We report the first demonstration of a surface channel inversion-type In0.53Ga0.47As n-MOSFET featuring gold-free palladium-germanium (PdGe) ohmic contacts and self-aligned S/D formed by silicon and phosphorus co-implantation. A gate stack comprising TaN/HfAlO/In0.53Ga0.47As is also featured. Excellent transistor output characteristics with high drain current on/off ratio of 104, high peak electron...
The continuous device scaling and performance improvements required by the International Technology Roadmap of Semiconductors (ITRS) are facing a grand challenge as conventional Si CMOS scaling comes to its fundamental physical limits. We review the research progress recently at Purdue University using In-rich InGaAs and epitaxial graphene on SiC as the novel channel materials for post Si CMOS applications...
This paper presents simulations on tunnel field-effect transistors (TFET) and comparisons carefully to assess their impact at the same supply voltage. Current-voltage characteristics are simulated for n and p TFETs with different channel materials:Si,Ge,InGaAs, and InAs. Results show that InAs has the highest current for its smallest bandgap and effective mass, but it can not meet the off-state leakage...
In this paper, the authors have demonstrated high-performance inversion-type E-mode In0.65Ga0.35As MOSFETs using ALD high-k gate dielectrics such as ALD Al2O3 and HfO2 with a maximum inversion current as high as 1.05 A/mm and a peak transconductance of 0.37 S/mm. These results suggest In-rich InGaAs could be an ideal channel material which is easy to integrate with high-k dielectrics and has a higher...
Further scaling of silicon MOSFET feature size is projected to provide diminishing performance enhancements resulting in an increasing performance gap beyond the 45 nm node of the International Technology Roadmap for Semiconductors (ITRS). To close this gap, the industry is contemplating a paradigm shift to channel materials with carrier mobility substantially higher than offered by silicon. MOSFETs...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.