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In this paper, we estimate the influences of random dopants (RDs) and interface traps (ITs) using experimentally calibrated 3D device simulation on electrical characteristics of high-κ / metal gate CMOS devices. Statistically random devices with 2D ITs between the interface of silicon and HfO2 film as well as 3D RDs inside the device channel are simulated. Fluctuations of threshold voltage and on-/off-state...
SOI FinFET transistors have emerged as novel devices having superior controls over short channel effects (SCE) than the conventional MOS transistor devices. However despite these advantages, these also exhibit certain other undesirable characteristics such as corner effects, quantum effects, tunneling etc. Usually, the corner effect deteriorates the performance by increasing the leakage current. In...
In this work, the influence of the Silicon/Buried Oxide Interface (Si/BOX) on the electrical characteristics of Silicon-On-Insulator (SOI) MOSFETs is investigated by means of numerical simulations. Considering the state-of-art dopant diffusion models and the effect of Si/BOX interface as a point defect sink, process simulations were performed to investigate the two-dimensional diffusion behaviour...
FinFET devices are extensively investigated due to the prospects for application in the sub-100 nm CMOS integrated circuits fabrication. Small size of the FinFETs and the properties of technological processes strongly influence their electrical characteristics. The random variations of the characteristics lead to a mismatch effect critical from the viewpoint of design and fabrication. In the paper...
We have observed new charge trapping phenomena in sub-80-nm DRAM recessed- channel-array-transistor (RCAT) after Fowler-Nordheim (FN) stress. Gate stack process strongly affected the charge trapping and the trap generating in oxide bulk and interface of RCAT. According to the trapped charges and/or the generated traps after FN stress, the data retention time and writing capabilities of DRAM were dramatically...
0.2 mum thin SOS film was modified by solid phase epitaxy using Si implantation. PMOS and NMOS devices and 54HC04 circuits were fabricated by the film. The DC characteristics of CMOS devices were measured. The transient irradiation and total dose irradiation test were put up. It was shown that fabricated integrated circuits have not only quite good electrical characteristics but also excellent transient...
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