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Methods of a MOSFET threshold voltage extraction have been briefly described. A possibility of their application for characterization of a fully-depleted SOI MOSFETs has been discussed. A simple method for SOI MOSFET threshold voltage characterization has been proposed. The concept has been verified based on experimental data obtained for SOI MOSFETs manufactured in ITE.
The paper presents a collection of slides that discusses a charge based compact model for enhancement mode PMOSFET operating in accumulation. The discussion includes silicon-on-glass substrates, RIT SiOG CMOS process, CMOS device operation, PACC model requirements, previous PACC modeling attemps, PACC model derivation (core model), PACC model results, fixed interface change, outstanding issues and...
In summary, as we move it 15 nm and beyond, it is critical that the device structure fit in ever smaller footprint. It seems that Si devices can fulfill this key requirement: moving from thick body devices to thin body and ultimately to Si nano-wires, in order to enable small gate length devices. This is the good news. Better news could be if we are able to find a device that can do better than Silicon...
In this work, the kldrp method is used to calculate the electronic subband structure. To reduce the computational cost of the carrier concentration calculation and henceforth the required number of numerical solutions of the Schrodinger equation, an efficient 2D k-space integration by means of the Clenshaw-Curtis method is proposed. The suitability of our approach is demonstrated by simulation results...
Due to increase of integration density on a chip, layout variations have a serious impact on MOSFET behavior, such as active-area-size dependence (the STI-stress effect), well-boundary location dependence (the well-proximity effect) and other proximity effects. A circuit MOSFET model (An extracted SPICE-parameter set) tends to have complex expressions. Circuit designers, however, require a sufficiently...
In this work, 3D monolithic cells have been demonstrated, featuring the first perfectly crystalline upper active layer thanks to wafer bonding. The low temperature process (<600degC) of the top GeOI and SOI MOSFETs leads to well behaved characteristics and allows preservation of bottom FETs performance. The benefit of the decreased process temperature is highlighted by improved short channel effect...
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