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Ultrashallow junctions were fabricated by chemical vapor deposition of pure boron (PureB) at 95 torr as opposed to atmospheric pressure deposition. The low pressure deposition process with hydrogen as carrier gas demonstrated to be a viable process for fabricating ideal diodes with low saturation current and no detrimental effects. The minimum deposition temperature for forming an ideal diode is 500°C...
This is the first report of a technique for inserting a thin Zr interlayer into a nickel film to improve the thermal stability of the silicide formed from this film. The sheet resistance of resulting Ni(Zr)Si film was lower than 2 Ω/□. X-ray diffraction and raman spectral analysis showed that only the silicides low resistance phase (NiSi), rather than high resistance phase (NiSi2), was present in...
Au/IrO2/Si heterostructures were built. Their DC current versus temperature characteristics were experimentally obtained to get the corresponding Richardson plots. From these plots, the Richardson constant was estimated for these devices. Then, from the current-voltage plots at room temperature the series resistance, ideality factor and barrier height were obtained by applying the method proposed...
Undoped p-type NiO thin film has been developed on high resistivity Si substrates by reactive pulsed laser deposition technique (RPLD). Subsequently an Al/NiO Schottky diode has been fabricated by electron gun evaporation and was functionalized as H2 gas sensor.
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