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Multi-layered Al:ZnO thin films, with wurtzite - type structure and thickness up to 120 nm, as determined by x-ray diffraction and HRTEM, were grown on Si-SiO2 and glass substrates by the sol-gel method. Fluorescence spectroscopy measurements show that 0.5 at.% Al doping determines a blue shift of the emission band observed at 387nm in the undoped material. The room temperature conductivity increases...
In this work are discussed the technology for preparing and characterisation of indium-tin oxide (ITO) and ITO with titanium oxide underlayer thin films with properties appropriate for usage at elevated temperatures as heat reflective coatings and gas sensors. For preparing the samples the methods of radio frequency (RF) and DC-magnetron reactive sputtering were used. Sputtering of indium-tin and...
BiFeO3-PbTiO3 (BFO-PT) thin films were fabricated by sol-gel technology. X-ray diffraction pattern reveals the BFO-PT films are in rhombohedral perovskite phase with random orientations. By Pt/BFO-PT/ITO/glass capacitor structure, co-measurement of electrical and optical responses can be achieved. Remanent polarization of 2Pr~40 muC.cm-2 and leakage current density of 2.5times10-5 A/cm2 at 100 kV/cm...
The effect of plasma assistance during vacuum evaporation was investigated. Silicon films were deposited by e-beam evaporation on Bright Annealed AISI 304 stainless steel and on soda-lime glass substrates at 225/spl deg/C, under 2.28/spl times/10/sup -3/ mbar and e-beam power of 720 W. A low voltage arc was used as a plasma source for ion plating, with argon and argon/hydrogen atmosphere. Structural...
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