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The effects upon the crystallographic properties of silicon films prepared from SiF/sub 4//SiH/sub 4//H/sub 2/ gas mixtures by varying the flow rate of SiF/sub 4/, input power, and the distance between parallel plate electrodes of capacitively coupled very high frequency plasma enhanced (VHF-PECVD) reactor are systematically studied. The results show that at low powers an appropriate electrode distance...
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