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We present vertically-stacked a-Si:H and AlN photonic circuits deposited on silicon using back-end CMOS technology. At 1550-nm telecom wavelengths, the a-Si:H (0.5-µm×0.22-µm) and AlN (1-µm×0.4-µm) channel waveguides are measured to have low propagation losses of ∼3.8 and ∼1.4 dB/cm, respectively. Various passive devices with high performance are demonstrated on these two photonic layers, including...
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