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The proposed work explains the absorption property of different material which can be used for the formation of Quantum Dot and their use in solar cells. By using property of Intermediate Band Gap of Quantum Dot efficiency of solar cells can also be increased. Along with it, it's found that absorption of Quantum Dot Depends on the angle by which light falls on them and in most of the cases its maximum...
Superlattice consisting of 10 alternate layers of a-Si with QDs and SiNx are incorporated as i-layer in a p-i-n solar cell using HWCVD method. Superlattice with QDs showed absorption coefficient in the range of ∼105–104 cm−1. Calculated optical bandgap of the SL with QDs (∼1.84 eV) is higher than the SL without QDs (∼1.79 eV) and this is attributed to QCE. The cells with QDs showed ISC= 1.806 µA and...
The optical and electrical properties of silicon quantum dots are calculated using effective mass theory and tight binding method. The bandgap and intersubband gap energies as well as the tunnelling transmission probability of silicon quantum dots embedded in an amorphous silicon nitride are calculated for different Si/N ratios. Optical absorption spectra are calculated using tight binding method...
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