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This paper reports on an industrial DHEMT process for 650V rated GaN-on-Si power devices. The MISHEMT transistors use an in-situ MOCVD grown SiN as surface passivation and gate dielectric. Excellent off-state leakage, on-state conduction and low device capacitance and dynamic Ron is obtained. Initial assessment of the intrinsic reliability data on the in-situ SiN is provided.
This paper reports an electromagnetic shielded cantilever-tip microwave-probe for conductive-property imaging at micro/nano surface-area. Equipped with an ultra-sharp tip apex (<;50 nm), the probe features small conducting path resistance of Rs<;5Ω and conducting path-to ground capacitance of Ctip≈1pF. These optimal-designed parameters facilitate satisfactory spatial resolution and microwave-signal...
This paper reports temperature dependant dielectric absorption measurements of SiN, Al2O3 and Ta2O5 MIM capacitors between 100Hz and 10GHz over a broad temperature range. The SiN dielectric clearly shows a temperature dependent dielectric absorption whereas for Al2O3 and Ta2O5 the effect is nearly temperature independent. A model is proposed for the 3 dielectric materials which takes into account...
In this paper we introduce an original Electrostatic Force Microscopy (EFM) -based methodology which allows a rapid and easy calculation of the charge density value of electric charges injected in a silicon nitride dielectric layer for conditions which prevail during MEMS switch actuation. The calculation of the number of trapped charges is reproducible and in agreement with the results already published...
In this paper, we report a thin-film encapsulation technology for wafer-level microelectromechanical systems (MEMS) variable capacitor package. The electrical characteristics of MEMS are adversely affected by moisture. In order to prevent moisture from permeating into a package, the top surface was protected with a plasma-enhanced chemical vapor deposition (PE-CVD) SiN layer. The developed packages...
Incorporating sensors onto a flexible substrate will add functionality to flexible displays. Though several attempts have been made to mount MEMS sensors on flexible substrates, none of the sensors have been integrally fabricated on the substrate. Fabricating MEMS sensors on flexible substrates along with display elements will provide new sensing capabilities and enhance functionality. We propose...
This paper deals with TLP and HBM test results for RF-MEMS capacitive switches. The methodology for each ESD testing simulator is commented, taking into account the accordance between the test bench and the device-under-test. The failure criteria of the tested structures are reported, showing their breakdown process under ESD.
The charging property of dielectrics between the upper and lower electrodes in capacitive micro-machined ultrasonic transducers (CMUTs) was investigated. In particular, the dependence of the capacitance of a CMUT cell on DC voltage (i.e., C-V curve) was measured before and after DC or DC+AC voltage stress was applied between the two electrodes. The charging was evaluated from the C-V curve shift....
Radio frequency (RF) micro-electro-mechanical systems (MEMS) capacitive switches show great promise for use in wireless communication devices such as mobile phones, but for the successful application of these switches their reliability needs to be demonstrated. One of the main factors that limits the reliability is charge injection in the dielectric layer (SiN) which can cause irreversible stiction...
In this work, we compare capacitance density of MIM capacitors between PECVD Silicon Nitride (SiN) and PECVD Silicon Oxynitride (SiON). Process parameters for both dielectrics are different in term of gasses, refractive index, and dielectric constant, while thicknesses are similar. The capacitors are tested on two different test structures, which are stand alone and matching cells. The size of the...
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