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To discuss the electromigration reliability of the copper chip interconnect, a transient non-linear dynamic and electrical finite element framework was developed. The simulation includes two major areas: one is the impact of the electromigration caused by current density and another one is the stress-migration relate to thermal-stress distribution in Cu interconnects. It was found that compared with...
Copper (Cu) wire bonding is getting more common as interconnections on aluminium (Al) bond pad metallization in microelectronics due to lower cost compared to gold wire bonding. The Cu-Al intermetallic compounds (IMC) growth in Cu ball bonds has been investigated by many researches but the understanding of the IMC phases is still incomplete and the impact to bond reliability know-how is limited. This...
Increasing cost of gold (Au) for bonding wires and decreasing die and, therefore, bond pad size raise the demand for alternative bonding wire materials. A cheap alternative with good electrical conductivity is copper. Cu wire is harder than gold and aluminium. The material itself shows a pronounced strain hardening, so that the hardness increases significantly during ball bonding. These mechanical...
The request of the electronic market to increase the working temperature of power integrated circuits up to 180-200degC has a big impact on the reliability of standard plastic packages. The joint between bonding ball and pad is mainly affected in conditions of high temperature and high current. Various solutions were tried in order to reach the target with standard interconnection solutions. If Au...
The story of copper wire has existed for decades, and it always looked to be a very promising material. However, despite all of its positive properties copper bonding wire never managed to find such a wide use as did gold wire. In recent years many semiconductor manufacturers made great efforts to replace gold with copper wire. Driving forces are the high gold price and some design benefits due to...
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