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Copper (Cu) wire bonding is getting more common as interconnections on aluminium (Al) bond pad metallization in microelectronics due to lower cost compared to gold wire bonding. The Cu-Al intermetallic compounds (IMC) growth in Cu ball bonds has been investigated by many researches but the understanding of the IMC phases is still incomplete and the impact to bond reliability know-how is limited. This...
In this paper we report on the use of Silicon wafer to wafer bonding technology using Trough Silicon Vias (TSV) and Cu to Cu hybrid interconnects. We demonstrate that multiple wiring levels of two separate wafers, can be interconnected on a full wafer scale by means of wafer bonding using classical metallization schemes found in IC's such as Al and Cu interconnect technologies. The wafer to wafer...
Increasing cost of gold (Au) for bonding wires and decreasing die and, therefore, bond pad size raise the demand for alternative bonding wire materials. A cheap alternative with good electrical conductivity is copper. Cu wire is harder than gold and aluminium. The material itself shows a pronounced strain hardening, so that the hardness increases significantly during ball bonding. These mechanical...
Ball bonding processes are optimized on Al pads with a 25.4 ??m diameter Cu wire to obtain maximum average shear strengths of at least 120 MPa. To quantify the direct effect of bond force and ultrasound on the pad stress, ball bonding is performed on test pads with piezoresistive microsensors integrated next to the pad and the real-time ultrasonic signals are measured. By using a lower value of bond...
The story of copper wire has existed for decades, and it always looked to be a very promising material. However, despite all of its positive properties copper bonding wire never managed to find such a wide use as did gold wire. In recent years many semiconductor manufacturers made great efforts to replace gold with copper wire. Driving forces are the high gold price and some design benefits due to...
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