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This paper reports that significant linearity improvement can be obtained in gallium nitride (GaN) RF power amplifiers (RFPAs) in comparison to laterally diffused metal oxide semiconductor (LDMOS) RFPAs through the use of a modulated drain supply. It is shown that the gain characteristic of a GaN RFPA has significant variation with the drain bias voltage and this results in a 10-20 dB reduction in...
Gallium nitride (GaN) amplifiers have demonstrated very high power density as well as wide bandwidth in previous research. This paper examines their use in supplying flat gain, power, and linearity across a large bandwidth. It demonstrates two types of power amplifiers: a Ft Doubler (FT2) amplifier and a Cascode amplifier, both of which require a simple PCB tune. Both amplifiers show 0.2 to 4GHz bandwidth...
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