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Nanoporous silicon and nanoporous ZnO were prepared by the electrochemical anodization of crystalline Si and Zn substrate. To passivate the defect states (arise due to the nano structure of the PS and ZnO thin film and introduce a barrier for the current conduction) and to improve the gas sensitivity the porous silicon and nano crystalline ZnO surfaces were modified by PdCl2 solution. The Pd modified...
A μ-porous silicon (μPS) gas sensor based on interdigitated μ-electrodes (IDμE's) has been designed and developed. μPS obtained by means of electrochemical anodization of a p-type silicon (c-Si) wafer was used as active layer. The μPS layers are supported by the bulk of the c-Si wafer. Interdigitated μ-electrodes, which work as transducers, were deposited on the μPS surface by means of gold evaporation...
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