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In this paper, we explore different implementation levels of RF power amplifiers, including a hybrid PCB approach and a system-in-package (SiP) approach based on low temperature co-fired ceramic (LTCC) technology. The selected device of the amplifier is a low cost Si based AlGaN/GaN high electron mobility transistor (HEMT). Measured results show that the LTCC-PA module can exhibit an output power...
In this paper, a theoretical analysis of inverse class-F power amplifier is carried out based on maximally flat drain current and voltage waveforms with the third-harmonic current and second-harmonic voltage peaking. The transistor is modeled as a switch in analysis, in which including non-zero switch-on resistance in parallel with an output capacitance. Therefore, the equations of drain efficiency...
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