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Toward realization of an ultralow-power-consumption semiconductor light source for on-chip optical interconnection, we have been investigating the lateral current injection (LCI) membrane distributed feedback (DFB) laser. This time, we realized membrane DFB laser with 158 nm core thickness and demonstrated room-temperature continuous-wave (CW) operation with a threshold current of 390 μA for the cavity...
Toward realization of an ultralow-power-consumption semiconductor light source for optical interconnection, we have been investigating the lateral current injection (LCI) membrane distributed feedback (DFB) laser. This time, we realized membrane Fabry-Perot (FP) laser with 220 nm core thickness and demonstrated room-temperature continuous-wave (CW) operation with a threshold current of 3.5 mA for...
Lateral current injection DFB laser with a-Si surface grating was demonstrated, as step to realize membrane laser. The threshold current of 7.0 mA and the differential quantum efficiency of 43% from the front facet were obtained.
Injection type DFB lasers directly bonded on an SOI substrate were realized for the first time. A threshold current as low as 104 mA was obtained with a stripe width of 25 mum and a cavity length of 1 mm.
Significant advances in the room-temperature (RT) continuous-wave (CW) output power of both type-l quantum-well (QW) active-layer lasers and interband cascade lasers have been reported within the 3-4-??m wavelength region in 2009. Recent developments on the growth of highly strained QWs and low-defect-density lattice-mismatched materials also demonstrate potential for realizing high-performance mid-infrared...
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