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Recently porous semiconductors have stimulated much of interests, because they exhibit different physical properties relative to those of bulk crystals. The high surface area, band gap shift, and efficient luminescence promised the use of porous semiconductor over a wide range, from optoelectronics to chemical and biochemical sensors applications. One of the most common techniques to fabricate porous...
The quality of a CdZnTe-based X-ray detector is highly related to the interface between semiconductor and metal contact. One of the factors that increase leakage currents in CdZnTe based X-ray detectors is the presence of a conductive surface layer. In this paper the result of the passivation of the CdZnTe surface by means of an aqueous solution of NH4F/H2O2 is studied by optical ellipsometry and...
Severe Al/poly-Si contact degradation is observed after metallising p-type BSF (back surface field) layers of poly-Si thin-film diodes on glass which received a hydrogen passivation treatment prior to contact formation. The degradation is confirmed by comparative dark I-V measurements on the hydrogenated and non-hydrogenated samples. Two methods - thermal annealing and Si etching using coloured HF...
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