The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
High power density is required for power converter in more electric aircraft due to the strict demands of volume and weight, which makes silicon carbide (SiC) extremely attractive for this application. In this paper, a prototype of 50-kW SiC two-level three-phase voltage source inverter is demonstrated with a gravimetric power density of 26 kW/kg (without inclusion of filter). A gate assisted circuit...
Wide bandgap semiconductors are promising regarding loss reduction and increase of switching frequency. In the specific case of two level power converter it has not been up to now clearly shown the potential of SiC and GaN in comparison with Si semiconductors. In this paper, a multi-variable analysis for different devices is carried out, considering system efficiency, heatsink size and output filter...
This paper focuses on the performance analysis of a single-phase inverter, in H-bridge configuration, implemented with silicon carbide (SiC) transistors, which includes an active power decoupling solution that does not require additional power semiconductors. The system is investigated in terms of voltage and current stress and how the efficiency is affected in comparison with the conventional H-bridge...
Wide band-gap materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC) offer improved performance for power electronic devices compared to traditional Silicon (Si) power semiconductor devices. This paper investigates a 600V GaN & Silicon CoolMOS transistor application in 400W single phase continuous conduction mode (CCM) Boost PFC converter circuits with GaN, SiC and ultrafast silicon...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.