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SiC devices are now achieving voltage and current ratings which challenge applications previously dominated by IGBTs. Unlike with IGBTs parallel connection of SiC devices may be used to reduce conduction losses. SiC conduction loss is reduced with low Rds(on), or large die area, while switching loss reduction requires small Coss, and small die area. An improved analytical model is presented to accurately...
This paper investigates the soft switching performance of a 1.2 kV half-bridge SiC MOSFET module, FCA150XB120 from Sanrex. The selected module has both MOSFET and diode integrated on a single chip. A single pulse control circuit is employed in a half-bridge series resonant inverter topology with a split dc-link and an LC load in order to emulate a real inverter operation. This results in a square...
The use of a model predictive control algorithm to reduce the losses in a 3L-NPC inverter with SiC neutral point diodes was investigated. It considers the reduced switching losses associated with the commutations that involve a SiC diode. A loss reduction of 5% is achieved compared to a standard sine-triangle modulation.
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double...
An auxiliary resonant-commutated pole (ARCP) ensures soft switching in the entire operation range of a three-phase dual-active bridge dc-dc converter. This work evaluates the design and the resulting boost in system efficiency for different semiconductor materials and devices. Afterwards, a full-scale medium-voltage prototype of an ARCP is constructed. The subsequent measurements are presented within...
With efforts to reduce the cost, size, and thermal management systems for the power electronics drivetrain in hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs), wide band gap semiconductors including silicon carbide (SiC) have been identified as possibly being a partial solution. Research on SiC power electronics has shown their higher efficiency compared to Si power electronics...
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