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In the diameter control system of silicon single crystal growth, the variation of the diameter of the aperture (i.e., a halo with high brightness, which appears at the junction of a solid crystal and a liquid solution) is consistent with the change in the diameter of the growing crystal. Therefore, the diameter of the aperture can be used as a control variable for adjusting the casting speed and temperature...
Automatic diameter control (ADC) is an important procedure in the Czochralski pulling. Crystal growth control system with an invariable diameter lacks a precise mathematical model, and has nonlinear and time-varying characteristics. For tacking above problems, fuzzy control strategy has been proposed in this paper. To enhance control accuracy and disturbance resisting ability, fuzzy-PI controller...
This paper describes a modeling and control approach for the thermal aspects of a high-temperature semiconductor crystal growth process. From a thermal perspective, each crystal growth cycle is composed of three distinct phases, heat up, growth, and cool down, each with specific control challenges and objectives. This paper focuses on the heat up and growth phases. A simulation model is first developed...
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