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Physical relationship among regrowth of damaged layer, dopant activation and dopant diffusion has been investigated in the formation of boron shallow junction of Si under low-temperature pre-annealing (PA) and non-melt laser annealing (LA). The degree of crystal regrowth was adjusted with pre-annealing time. It is clarified that the regrowth of amorphous Si layer up to the junction depth has an important...
We report a simple synthesis of AlN nanowires via catalyst-assisted chemical vapor deposition method. These high quality and uniform nanowires have smooth surface with diameter of 50 nm and length of 10-30 ?? m, which are hexagonal single-crystal with lattice parameters c = 0.497 nm, a = 0.272 nm and grow along [100] direction. The morphology and structure were characterized by scanning electron microscopy,...
In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation...
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