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Strain issues on various commercial-substrates of InP, GaAs and GaP have been investigated by evaluating residual strain distribution with a scanning infrared polariscope (SIRP) and a near-infrared imaging polariscope (NIRIP). Since the thermal history during crystal growth and device-fabrication processes is sensitively reflected in the residual strain distribution, it is useful not only to control...
Results of buckling analyses for three closely related thermal profiles are discussed. They come from the same basic furnace design but reflect changes that occur in the thermal profile when different pull speeds are used to produce wider or thicker ribbon. It is shown that the three profiles differ near the solid-melt interface. Details of the calculation procedure for the in-plane stresses are also...
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