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Aluminum nitride (AlN) bulk single crystals up to 45 mm in diameter and 10 mm in thickness have been successfully grown on 6H-SiC(0001) substrates by the sublimation method. Moreover, high growth rate of 200μm/h has been achieved by high temperature homo-epitaxial AlN growth on AlN(0001) substrate. The Raman spectrum indicates that the polytype of the grown AlN single crystals is a Wurtzite-2H type...
Crystal growth behavior from silicon melt was observed using a confocal scanning laser microscope with an infrared image furnace. The morphology of growth interface changed from planar to facet with increasing growth rate. The facet vanishing process was also observed. It was shown that the (111) facet formed at a steady state. The undercooling in front of the facet interface was measured by an infrared...
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