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Reducing the amount of secondary phases in as grown Cd1-xZnxTe material is one of the biggest challenges in modern crystal growth industry. Results of the post processing experiments as well as its short comes would be described in this paper. Consequences of various experiments performed to decrease the amount of secondary phases by changing the initial charge compositions and the growth parameters...
Physical relationship among regrowth of damaged layer, dopant activation and dopant diffusion has been investigated in the formation of boron shallow junction of Si under low-temperature pre-annealing (PA) and non-melt laser annealing (LA). The degree of crystal regrowth was adjusted with pre-annealing time. It is clarified that the regrowth of amorphous Si layer up to the junction depth has an important...
InP crystals were synthesized with a Ta admixture grown by the Czochralski technique, and wafers cut from the grown crystals were converted to the SI state by high-temperature annealing. The good detection performance of such material-based detectors has been tested with alpha-particles from a 241Am source (5.48 MeV). The charge collection efficiency (CCE) of 84% and relative energy resolution at...
Bulk indium phosphide single crystals were grown by the liquid encapsulation Czochralski method using vertical Bridgman low pressure synthesis of poly-crystalline InP. The semi-insulating state necessary for radiation detection was created by the iron doping or iron-zinc and titanium-zinc co-doping. High temperature annealing of very pure or tantalum doped InP were also done. For characterization...
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