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An ultra-thinning down to 2.6-um using 300-mm 2Gb DRAM wafer has been developed. Effects of Si thickness and Cu contamination at wafer backside in terms of DRAM yield and retention characteristics are described. Total thickness variation (TTV) after thinning was below 1.9-um within 300-mm wafer. A degradation of retention characteristics occurred after thinning down to 2.6-um while no degradation...
This study is focused on understanding the effect of thermal cycling on the signal integrity characteristics of TSV isolation liner (SiO2). The use of radio frequency (RF) signals is found to be a good metrology tool for the detection of discontinuities in the SiO2 isolation liner. Signal degradation is found to scale with the attained number of thermal cycles. Atomic force microscopy (AFM) analysis...
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