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Nanodiamond with dielectric strength greater than 2MV/cm was grown by microwave plasma enhanced chemical vapor deposition and used as a leaky dielectric film for RF MEMS capacitive switches. Nanodiamond films grown by MPECVD were compared with Si3N4 films deposited by RFPECVD by means of transient current measurements. Nanodiamond was characterized by SEM, AFM and Raman spectroscopy for correlation...
Summary form only given. Microwave plasma assisted chemical vapor deposition (MPACVD) is one of the techniques used to grow ultrananocrystalline diamond (UNCD) films in the laboratory. UNCD films are characterized as smooth films consisting of few-10's nanometer sized crystals of diamond. The exceptional properties of these films, such as high hardness and chemical inertness combined with their small...
Summary form only given. The idea of making use of the highly energetic carbon dimer molecular species, C2, to nucleate and grow diamond was conceived in 1991. Importantly, this approach obviates the presence of atomic hydrogen to perform sequential hydrogen abstraction reactions, a requirement essential for conventional CVD diamond synthesis. The C2 process uniquely results in the synthesis of ultrananocrystalline...
Summary form only given. For wide application of the CVD diamond in output windows of high-power microwave sources it is necessary to establish a CVD process for production of thick diamond films with controlled quality. Currently there are some microwave plasma CVD (MPACVD) reactors at 2.45 GHz frequency which may be used for this purpose. In our experiments polycrystalline high-quality diamond films...
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