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Phase change memory (PCM) recently has emerged as a promising technology to meet the fast growing demand for large capacity memory in modern computer systems. In particular, multi-level cell (MLC) PCM that stores multiple bits in a single cell, offers high density with low per-byte fabrication cost. However, despite many advantages, such as good scalability and low leakage, PCM suffers from exceptionally...
A fully functional phase change memory (PCM) was fabricated and demonstrated that enables ultra low 0.3mA SET and 0.5mA RESET writing currents through a tungsten bottom electrode contact (BEC) with diameter of 90nm. This was achieved by integrating Si2Sb2Te5 (SST) storage material into 0.13um standard CMOS technology and resulted from the high electrical resistances of the novel chalcogenide both...
In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.
As digital resources increasingly growing and the economic benefit of digital intellectual property rights being increasingly important, people has been increasingly emphasis on information security issues brought by the data remnants in storage devices. They try their best to prevent the potential risks. In this paper, we survey comprehensively related technologies, standards and trends of erasure,...
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