The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We proposed and fabricated AlGaN/GaN HEMT with high stable reverse blocking characteristics employing fluoride plasma treatment using CF4 gas. The plasma treatment with various rf power was performed selectively on drain-side gate edge region where electric field was concentrated. Unlike normally-off process, fluoride plasma treatment with attenuated RF power expanded gate depletion region in the...
We present a systematic study of the impact of CF4 plasma treatment on GaN. It was found that CF4 plasma etches GaN at a slow rate and yields a smooth etched surface. The effect of CF4 plasma on electrical characteristics of GaN metal-semiconductor field-effect-transistor structures shows that the CF4 plasma introduces acceptors into the near surface region of the GaN, which depletes mobile electrons...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.