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The electrical behaviour of porous silicon layers has been investigated on one side of p-type silicon with various anodization currents, electrolytes, and times. Electron microscopy reveals the evolution of porous silicon layer morphology with variation in anodization time. In this work electrical conductivity of bulk silicon and porous layer which is formed by electrochemical etching is compared...
Columnar structured amorphous carbon nitride films were deposited by reactive radio frequency magnetron sputtering from a graphite target in glow discharge plasma of nitrogen. The columnar structure was observed in all specimens of the amorphous carbon nitride (a‐CNx) films deposited on substrates of crystalline Si and quartz glass within substrate temperatures between RT and 853 K in nitrogen gas...
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