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Influence of operating temperature on short channel characteristics, analog and RF performance of Double gate MOS transistor is systematically investigated with the help of a 2-Dimensional commercial device simulator. Temperature compensation point is observed in the transfer characteristics of device. Overall improvement in Analog/RF Figure of Merit is observed at low temperature operation.
Orientation dependence and asymmetry of VT (threshold voltage), gm (transconductance), S (subthreshold slope), and Ioff (off-state current at VG =3D 0 V) in 0.18 ??m n-MOSFETs were measured and analyzed. The test structure contains 8 different channel orientation angles of 0??/45??/90?? and three kinds of process conditions. Although VT, gm and S scarcely show particular anisotropy except for the...
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