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Employing a strain-reducing layer stack between Si substrate and MQW layers as well as optimization of quantum well thicknesses of InGaN/GaN/Si MQW electroluminescent heterostructures led to disappearance of cracks and pinholes, to reduction of the laser threshold down to 75 kW/cm2 at 433 nm under N2 laser emission excitation.
We are reporting a p-InGaN cap layered AlGaN/GaN normally-OFF type HEMTs on silicon substrate with VG applicable as high as +3.5V without gate leakage. Further we achieved a high breakdown for relatively a small gate-drain length (Lgd) of 3 μm. Demonstrating a normally-OFF type AlGaN/GaN HEMTs on low cost Si substrate, coupled with high breakdown is an important step forward to integrate enhancement...
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