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This paper describes design considerations for millimeter-wave CMOS power amplifiers (PA). Solutions are presented from device level to circuit level and demonstrated by a measured 60 GHz PA prototype in 65 nm bulk CMOS technology. The proposed PA achieves a peak output power of 14 dBm with a peak power-added efficiency (PAE) of 7.2%. The small signal gain is 10.2 dB and 1-dB compression output power...
Analysis and synthesis of the new Class-E3F2 power amplifier (PA) are presented in this paper. The proposed circuit offers means to alleviate some of the major issues faced by existing Class-EF and Class-EF2 PAs, such as (1) substantial power losses due to parasitic resistance of the large inductor in the Class-EF load network, (2) unpredictable behaviour of practical lumped inductors and capacitors...
Some important aspects of CMOS RF PA design are discussed. Improving efficiency at circuit level is discussed first, as well as the challenge to achieve high output power in low-voltage CMOS. Next, some PA architectures are reviewed. It will be shown how signal processing can be used to improve the efficiency of a CMOS PA.
In this paper, a fully integrated E-band power amplifier with 17 dB gain, 11.5 dBm saturated output power, and 5 GHz bandwidth was achieved in the 90 nm CMOS technology. The amplifier configuration consists of two cascode stages and a common-source output stage. It exhibits a peak power added-efficiency of 20% while consuming 50 mW from a 1.5 V power supply.
In this work, a MOS based output matching network is designed and fabricated using IHP (innovations for high performance), 0.25 mum-SiGe HBT process and measured which can give 4 different impedance values. Also, a multi-band, Class-A, power amplifier (PA) has been designed with same technology and the desired output impedances for matching network are taken from the load-pull simulation results of...
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