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Hot carrier degradation is critical for LDMOS transistors especially in applications where inductive loads are repetitively switched. In this work, a model for predicting the hot carrier degradation of an LDMOS in dynamic operation conditions is developed and verified for a device driving an inductive load in repetitive clamping mode. Device simulations are performed using the hydrodynamic model....
The drift of electrical parameters due to the injection of high energetic ??hot?? carriers into the oxide during operation is a serious concern regarding the reliability of lateral double-diffused transistors (LDMOSFETs). This is amplified by down-scaling, increasing the electric field in the drift region and thus the rate of hot carrier generation. As a consequence, profound knowledge of the hot...
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