The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited using the atmospheric pressure chemical vapor deposition (APCVD) method at 1200°C using the single-precursor hexamethyldisilane Si2(CH3)6 (HMDS) as the Si and C precursors. 0~40 seem N2 gas was used as the doping source. A...
A-axis preferred orientation AlN thin films are deposited on Si(100) substrates by radiofrequency-assisted metal organic chemical vapor deposition method. Use high-purity nitrogen as nitrogen precursor and trimethyl-aluminum as aluminum precursor, respectively. Crystalline quality, surface morphology and other properties of the films are investigated by X-ray diffraction and scanning electron microscope...
We compare the electrical properties and interface characteristics in terms of nitrogen depth distribution and hydrogen diffusion behavior of two CVD oxide tunnel films that were nitrided by NO and N2O gas, respectively. The N2O-oxynitride shows a stronger resistance against the approach of the SiO2/Si interface by diffusing hydrogen in nuclear reaction analysis. This H diffusion behavior correlates...
The present paper focuses on the study of electrical and physico-chemical properties of films deposited by Low Pressure Chemical Vapor Deposition or (LPCVD). These films are composed of two layers, boron doped polysilicon (polySi) and nitrogen doped polysilicon (NIDOS). The results indicate that the resistivity values increases versus increasing of the annealing duration, this can be explained by...
This work investigated the electrical and morphological properties of nitrogen doped silicon (NIDOS) thin films. The samples are obtained by LPCVD at low temperature (465degC) by a mixture of disilane (Si2H6) and ammonia (NH3). This stage of deposit is followed by a heat treatment at several temperatures and durations. The resistivity measurements showed an increase in the resistivity values with...
In this paper we discuss the influence of the chemical interaction between boron and nitrogen introduced in polysilicon thin layers by using two different doping modes, on electrical and structural properties of boron and nitrogen codoped polysilicon thin films. The in-situ nitrogen doped silicon samples are obtained by LPCVD at low temperature (465degC) by a mixture of disilane (Si2H6) and ammonia...
In this paper, the effect of nitrogen and hydrogen incorporation into silicon rich oxide (SRO) on its charge-trapping properties was studied. The samples were prepared by low pressure chemical vapor deposition (LPCVD) on Si substrates, and nitrogen was introduced into SRO adding NH3 to the reactive gases. Hydrogen was incorporated by low temperature annealing in forming gas. The charge properties...
Homoepitaxial growth of unintentional doped, nitrogen (N) doped n-type, and boron (B) doped p-type 4H-SiC epilayers on off-oriented n-type and semi-insulating Si-face (0001) substrates was performed in a horizontal hot-wall chemical vapor deposition (HW-CVD) reactor with SiH 4 and C2H4 at temperature of 1500 degC and pressure of 40 Torr. The electrical and structural properties, and intentional in-situ...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.