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Gallium Nitride, in the form of epitaxial HEMT transistors on silicon carbide substrates is now almost universally acknowledged as the replacement for silicon bipolar, power MOSFET, high power devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-SiC based MMIC's which enable state-of-the-art high frequency performance and bandwidth to be extended into Ku-Band and Ka-Band...
We present a new bonding process for gallium nitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and sCd at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout)...
GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.
Hybrid integration of GaN and Si photonic devices is promising. Using a polymer bonding technique, GaN microring resonators are fabricated on Si substrate. Transmission characteristics of the GaN microring is measured.
Hall-effect measurements for n-type and p-type GaN with low doping concentration are presented. The GaN layers were grown by metal-organic vapor phase epitaxy on hydride-vapor-phase-epitaxy-grown free-standing GaN substrates. For n-GaN, the origin of acceptor which compensating donor is not only C but also native defects for the Si doping concentration of 1016 cm−3 level. The electron mobility is...
In this work, a viable passive components and transmission media technology is presented for THz-Monolithic Integrated Circuits (THz-MIC). The developed technology is based on shielded microstrip (S-MS) employing a standard monolithic microwave integrated circuit compatible process. The S-MS transmission media uses a 5-µm layer of benzocyclobutene (BCB) on shielded metalized ground plates avoiding...
Elastomer stamp micro-transfer-printing is a highly scalable method for the assembly of microscale components onto non-native substrates. One of the key value propositions of micro-transfer-printing is that the transfer stamp can be scaled to wafer-dimensions and can transfer tens to thousands of micro-devices in a single step, equating to multiple millions of units per hour. Here, we report on the...
AlGaN/GaN based high electron mobility transistors (AG-HEMTs) are strong candidates for the future high power and high frequency applications. But the formation of hot-spots and high temperature in these localized regions can limit their applications due to performance degradation and break-down. Understanding the underlying thermal transport processes will be an important step towards solving heat...
This paper demonstrates fundamental evaluation results of a C-band rectifier using Si substrate for HySIC application. Usage of the Si substrate is attractive for future integration with other mixed signal circuit. Because of large loss tangent of the Si substrate, applicability as a circuit substrate to the C-band rectifier is discussed. Two types of the rectifier, conventional printed circuit board...
A method to integrate III-V compound semiconductors (GaN HEMT, InGaN LED, InGaAs HEMT or InGaP LED) with Si-CMOS on a common Si substrate is demonstrated. The Si-CMOS layer is temporarily held on a Si handle wafer. Another III-V/Si substrate is then bonded to the Si-CMOS containing handle wafer. Finally, the handle wafer is released to realize the Si-CMOS on III-V/Si substrate. Through this method,...
Power electronic converters use semiconductors to satisfy the needs of different applications. Nowadays, these semiconductors are mainly based on Silicon (Si), which can be processed virtually without defects. However, the limits of Si are being reached and in consequence, Si based semiconductors have limited voltage blocking capability, limited heat transfer capability, limited efficiency and maximum...
GaN-based normally-off Gate Injection Transistors (GITs) with p-type gate over AlGaN/GaN heterojunction are fabricated on bulk GaN substrates. Thickness of insulating GaN buffer layer is increased up to 16 μm for the presented device from 5 μm for conventional GITs on Si. The thick buffer reduces the parasitic output capacitances, which enables fast turn-off switching. The thick buffer and the use...
The influence of the total thickness (periods of AlN/GaN SLs) of AlN/GaN superlattices (SLs) buffer on the static electrical properties of AlGaN/GaN HFETs is study for the purpose of improving device's breakdown voltage (BV) and reducing its on-resistance (RON). It is found that for top-GaN layer with a constant thickness of lμm, a proper thickness of AlN/GaN SLs buffer (such as 2.5 μm with 100 period...
This paper compared the fatigue damage accumulation of the gold-tin eutectic die attach layer in different high electron mobility transistor (HEMT) packages with various types of die attach layers and substrates under thermal cyclic loading. The fatigue damage per cycle used in this study was characterized by the accumulation of plastic work, which was derived by the finite element analysis (FEA)...
In this paper, the leakage path and breakdown behavior of GaN on silicon substrate were studied systematically. Three terminal breakdown voltage characteristics of the samples with various ohmic contacts spacing were evaluated. With increasing the spacing between the contacts, the breakdown voltage increased linearly first and then saturated. In order to clarify the breakdown behavior, leakage path...
The switching characteristics of vertical Gallium Nitride (v-GaN) diodes grown on GaN substrates are reported. v-GaN diodes were tested in a Double-Pulse Test Circuit (DPTC) and compared to test results for SiC Schottky Barrier Diodes (SBDs) and Si PiN diodes. The reported switching characteristics show that GaN diodes, like SiC SBDs, exhibit nearly negligible reverse recovery current compared to...
A RF leakage phenomenon in GaN HEMTs on Si substrates is analyzed with taking atomic diffusion at buffer/substrate interface into consideration, and a novel physical model of RF leakage based on the analysis is proposed. The Al or Ga atoms are moved from buffer layer to Si substrate at an epitaxial growth. Then, an acceptor layer with high hole density and an inversion layer with high electron density...
A simple and effective method to grow GaN on Si substrates has been achieved. The method that GaN comes out from a submicron and deep hole with nearly zero dislocations above the mask is demonstrated. This work proves that reducing the epitaxy area by using mask and increasing the depth to width ratio of pattern contribute to filtering the dislocations and improving the quality of GaN.
In this work, the electrical properties of AlGaN/GaN heterostructure grown on Si substrate with low-temperature AlN (LT-AlN) interlayers were investigated. Hall effect measurement was used to test the electrical properties of AlGaN/GaN heterostructure in all samples with different LT-AlN thickness. It is showed that the thickness of low-temperature AlN interlayers in the bufferlayer obviously effect...
A monolithic diode laser on (001)Si is useful for silicon photonics. Ga (Al, In)N nanowires can be grown catalyst-free on silicon and other substrates [1]. The diameter of individual nanowires in an array and the array density can be varied over wide ranges. Single or multiple InGaN disks can be inserted in Ga(Al)N nanowires and the alloy composition in the disk can be varied to tune the luminescence...
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