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Thin crystalline films of zinc oxide (ZnO) of high quality have been grown epitaxially on a (0001) c-plane of a sapphire substrate with atomic layer deposition (ALD) at extra-low temperature. With diethylzinc (DEZn) and deionized water as precursors in combination with interrupted flow, we obtained ZnO thin films with an optimal growth window in a range 25–160°C, so effectively lowering the growth...
ZnO thin films were deposited on polyethersurfone (PES) substrates by atomic layer deposition (ALD). We investigated the effects of O2 plasma pretreatment from 0 W to 100 W before the ZnO growth. When the plasma power was increased, the PET substrate surface roughness was also increased. However, the surface roughness of ZnO on the roughest PET substrate with maximum plasma power pretreatment showed...
We formed epitaxial ZnO thin films on a (0001) c-plane sapphire substrate through deposition of atomic layers (ALD) at 25–160°C using diethylzinc (DEZn) and deionized water as precursors in combination with interrupted flow. High-resolution X-ray diffraction measurements were employed to characterize the microstructure of these films. With interrupted flow, we obtained ZnO thin films with an optimal...
In this paper, ZnO nanorods were synthesized by the hydrothermal process on various substrates such as glass, ITO, p-type porous silicon and n-type porous silicon by dipping in ZnO solution and atomic layer deposition method. The thin films a grown on substrates were washed with deionized water to eliminate residual salts, dried in air, and annealed at 400 degC. Scanning electron microscopy and X-ray...
ZnO has been considered in various industrial applications owing to its piezoelectric properties and wide band gap of near ultraviolet. However, its application to optoelectronic and display devices is still very limited due to the difficulty in obtaining good and stable p-type ZnO. In order to study p-type ZnO (ZO:N), we developed a plasma enhanced atomic layer deposition (PEALD) system adopting...
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