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Fabrication and characterization of MOSFETs having monolayer channels comprised of the transition metal dichalcogenide molybdenum disulfide (MoS2) are active areas of research. In this paper, we show that a simple and traditional MOSFET model, when including an accurate threshold voltage and gate-bias-dependent source/drain resistance, achieves a good visual fit to our measured data, in the linear...
We report for the first time a TCAD investigation on the spatial distribution of carrier injection at MoS2 contacts. The proposed semi-classical approach successfully captures the experimentally observed contact behavior. Using the model, we identify that for monolayer and bilayer MoS2, the carriers are injected at the edge of the contact metal, resulting in a high contact resistance. The primary...
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